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RFMD to Play Key Role to Support NC State Clean Energy - Signs 5-year $70 Million Contract
Green Technology Featured Articles
January 20, 2014

RFMD to Play Key Role to Support NC State Clean Energy - Signs 5-year $70 Million Contract

By Meenakshi Shankar
TMCnet Contributor

Today, more than ever, is the time to fight to have clean energy. The focus of many countries is to have efficient energy and renewable energy. According to industry analyst firm Strategy Analytics (News - Alert), the Gallium Nitride (GaN) microelectronics market is expected to more than triple to $334 million by 2017, representing a compound annual growth rate (CAGR) of 28 percent.


RFMD (News - Alert) is a company specializing in high-performance radio frequency solutions. The company recently announced that it will play a key role in developing power electronics to support the next generation of clean energy in the U.S. The company is roped in as a foundry and product design/development partner to North Carolina State University's Next Generation Power Electronics Innovation Institute, in a 5-year $70 million contract from the Department of Energy to lead next generation power electronics manufacturing.

As per the deal, RFMD will offer open foundry services to support the NC State-led program and help accelerate the development of key wide bandgap (WBG) semiconductor products including RFMD's Gallium Nitride-(GaN-) based devices needed to increase the reliability and efficiency of the next generation power grid.

"This government-sponsored award underscores RFMD's commitment to technology and product leadership and will benefit the entire power electronics industry as it transitions to clean, more efficient energy," Bob Bruggeworth, president and chief executive officer at RFMD said in a statement.

"The RFMD team is proud to play a key role in the development of power electronic devices based on our leading GaN technologies that will help provide economic and environmental benefits in the U.S. for generations to come," added Bob.

Wide bandgap semiconductors offer a new opportunity to jumpstart the next generation of smaller, faster, cheaper and more efficient power electronics for personal devices, electric vehicles, renewable power interconnection, industrial-scale variable speed drive motors and a smarter, more flexible grid.

NC State's Next Generation Power Electronics Innovation Institute is the first of three manufacturing innovation institutes established by the Obama administration through a Federal commitment of $200 million across five Federal agencies - Defense, Energy, Commerce, NASA, and the National Science Foundation.

As NC State's device manufacturer and foundry partner, RFMD's role is to transition current Gallium Nitride- (GaN-) on-silicon carbide technology to 6-inch GaN-on-silicon at the Company's wafer fab in Greensboro, N.C. RFMD's devices is believed to deliver superior power density, improved power efficiency and higher switching frequencies for next generation smart grid requirements. 




Edited by Cassandra Tucker


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