Alpha and Omega Semiconductor Limited (AOS), a designer, developer and global supplier of a broad range of power semiconductors, has entered Insulated Gate Bipolar Transistor (IGBT) market with one of the best-in-class product family.
The company has announced the release of its first family of high efficiency 600V Insulated Gate Bipolar Transistors (IGBTs) in AlphaIGBT technology to address the growing need for energy efficient devices targeting motor control and power conversion applications.
Officials with AOS said that the company’s patent pending AlphaIGBT proprietary technology combines a unique cell and vertical device structure to offer best-in-class conduction (VCE(SAT)) versus switching loss (EOFF) trade-off and longer short-circuit capability.
Company officials pointed out that as a result, AlphaIGBT enables a wide operation frequency range to address a variety of applications such as white goods, industrial equipment, as well as commercial type heating and solar inverters.
According to company officials, AOS's AlphaIGBT products offer 2.5 times lower turn-off switching loss (EOFF) and two times higher short circuit withstand time (SCWT) rating compared to the current leading competition device with similar VCE(SAT) values. The ultra low gate-charge (Qg) of AlphaIGBT makes the devices incredibly easy to drive.
Moreover, the low QGC/QGE ratio allows the devices to withstand higher dV/dt transients and prevents oscillation issues in bridge applications.
"After successfully establishing its position in the low-voltage to high-voltage MOSFET markets with best-in-class products, AOS is now ready to open a new chapter by offering superior IGBT products," said Yalcin Bulut, vice president of discrete product lines at AOS, in a statement.
Bulut said that with an expertise in device physics and deep system and application knowledge, AOS is raising the bar for IGBT performance as well.
Company officials said that the 600V 5A, 10A and 15A AlphaIGBT parts are immediately available in production quantities with a lead-time of 12 weeks.
Edited by Brooke Neuman