Zilog Releases ZMOTION Detection and Control

The ZMOTION Detection and Control Family from Zilog now have New Solution Kits, the company has announced. Zilog is a wholly owned subsidiary of IXYS Corporation.

Zilog’s ZMOTION Detection and Control Product Family is a series of high-performance microcontrollers with integrated motion detection algorithms combined with a selection of lenses and passive infrared (PIR) sensors to fit a wide range of application requirements.

Combined with a selection of lenses and pyroelectric sensors to fit a wide range of application requirements, the kits are based on the Zilog high-performance MCUs with integrated motion detection algorithms. Ensuring the best possible performance while significantly reducing development risk and costs and minimizing time to market for customers, optimized configuration parameters for the ZMOTION MCU, the company has stated.

“IXYS and its divisions have been participating in the energy, power management markets, and the security industry for decades, especially with our power semiconductors, ICs and Solid State Relays,” commented Dr. Nathan Zommer, CEO of IXYS Corporation. “These new ZMOTION products by our Zilog team expanded our solutions to smart motion detection where smart motion sensing capability is key for occupancy detection.”

Offering a wide variety of applications, Zilog currently offers the ZMOTION MCU as “stand alone” or bundled with combinations of 10 different lenses and PIR sensors. The company has also announced that two new kits will be added to the existing portfolio. Eliminating the need for any mechanical lens holder designs, the NCL-10IL and the NCL-3B are both small form factor circular lenses that clip directly on to the pyroelectric sensor, the company has stated.

In July 2010, the company unveiled a family of AlGaAs/InGaAs-based low noise pHEMT devices for microwave applications up to 38 GHz. The newly released low noise devices are MwT-LN240, MwT-LN300 and MwT-LN600 and they are fabricated using high reliability AlGaAs/InGaAs pHEMT (pseudomorphic High Electron Mobility Transistor) process with a nominal 0.15 micron gate length and gate widths of 240 um, 300 um, and 600 um, respectively, the company stated.